SISPAD 2025
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation.
SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.
In 2025, SISPAD was held in Grenoble (France) and Alessandro Pilotto presented the original contribution "Ab-initio transport study of Source-to-Channel Resistance in Metal-MoS2 Top Contacts including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment". The research work, which lead to the results presented at the conference, has received funding from the European Union’s Horizon Europe research and innovation programme under AttoSwitch (GA no. 101135571).