Neuromorphic object localization using resistive memories and ultrasonic transducers

F. Moro, E. Hardy, B. Fain, T. Dalgaty, P. Clémençon, A. De Prà, E. Esmanhotto, N. Castellani, F. Blard, F. Gardien, T. Mesquida, F. Rummens, D. Esseni, J. Casas, G. Indiveri, M. Payvand, E. Vianello. Nature communications 13, 3506, 2022.

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 

R. Fontanini, M. Segatto, K. S. Nair, M. Holzer, F. Driussi, I. Häusler, C. T. Koch, C. Dubourdieu, V. Deshpande, D. Esseni. IEEE Transactions on Electron Devices, vol. 69, p. 3694, 2022.

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

R. Fontanini, J. Barbot, M. Segatto, S. Lancaster, Q. Duong, F. Driussi, L. Grenouillet, L. Triozon, J. Coignus, T. Mikolajick, S. Slesazeck, D. Esseni, IEEE Journal of the Electron Devices Society 10, 593-599, 2022.

Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures

M. Segatto, R. Fontanini, F. Driussi, D. Lizzit, D. Esseni.  IEEE Journal of the Electron Devices Society, 10, 324-333, 2022.

Modeling and design of FTJs as multi-level low energy memristors for neuromorphic computing

R. Fontanini, M. Segatto, M. Massarotto, R. Specogna, F. Driussi, M. Loghi, D. Esseni.  IEEE Journal of the Electron Devices Society, 9, 1202-1209, 2021.

Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off

D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, and D. Esseni, ACS Appl. Nano Mater. 6, 7, 5737–5746, 2023.

Ab–initio transport simulations unveil the Schottky versus Tunneling barrier trade–off in metal–TMD contacts

D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, and D. Esseni, Proceedings of International Electron Devices Meeting (IEDM), 2022.

Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors

A. I. Khan, P. Khakbaz, K. A. Brenner, K. K. H. Smithe, M. J. Mleczko, D. Esseni, E. Pop. Applied Physics Letters, vol. 116, 203105, 2020.

Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors 

A. D. Smith, F. Niklaus, A. Paussa, S. Schröder, A.C.Fischer, M. Sterner, S. Wagner, S. Vaziri, F. Forsberg, D. Esseni, M. Östling, Max C. Lemme, ACS Nano, vol. 10, p. 9879-9886, 2016.

Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX2 (M = Mo, W; X = S, Se) 

M. Hosseini, M. Elahi, M. Pourfath, D. Esseni,  IEEE transactions on Electron Devices, vol. 62, p. 3192-3198, 2015.

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

M. Li, Mingda, D. Esseni, J. J. Nahas, D. Jena, H. G. Xing, IEEE Journal of the Electron Devices Society, vol. 3, p. 200-207, 2015.

Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

A. D. Smith, F. Niklaus, A. Paussa, S. Schröder, S. Vaziri, A.C. Fischer, M. Sterner, A.Delin, D. Esseni, P. Palestri, M. C. Lemme, Nano Letters, vol. 13, p. 3237-3242, 2013.

Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling

A. Paussa, G. Fiori, P. Palestri, M. Geromel, D. Esseni, G. Iannaccone, L. Selmi, IEEE Transactions on Electron Devices, vol. 61, p. 1567-1574, 2014.

Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2-Based Ferroelectric/Dielectric Heterostructures

M. Hoffmann, M. Gui, S. Slesazeck, R. Fontanini, M. Segatto, D. Esseni, T. Mikolajick, Advanced Functional Materials, pp. 2108494 , 2022.

Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors

D. Esseni and R.Fontanini, Nanoscale, vol. 13, p. 9641-9650, 2021.

Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

T.Rollo, F. Blanchini, G. Giordano, R. Specogna, D. Esseni, Nanoscale, 12, 6121–6129, 2020.

New design perspective for Ferroelectric NC-FETs

T.Rollo,  D. Esseni. IEEE Electron Device Lettters, Vol.39, pp.603 , 2018.

Influence of Interface Traps on Ferroelectric NC-FETs

T.Rollo,  D. Esseni. IEEE Electron Device Lettters, Vol.39, pp.1100, 2018.

Energy Minimization and Kirchhoff’s Laws in Negative Capacitance Ferroelectric Capacitors and MOSFETs

T.Rollo,  D. Esseni. IEEE Electron Device Lettters, Vol.38, pp.814, 2017.

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

Y. Shao, M. Pala, D. Esseni, J. A. del Alamo. IEEE Transactions on Electron Devices, Vol. 69, pp.2188, 2022.

A review of selected topics in physics based modeling for tunnel field-effect transistors

D. Esseni, M. Pala, P. Palestri, C. Alper, T. Rollo, Semiconductor Science and Technology, vol. 32, pp. 083005, 2017.

Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits

F. Settino, M. Lanuzza, S. Strangio, F. Crupi, P. Palestri, D. Esseni, L. Selmi, IEEE Transactions on Electron Devices, vol. 64, p. 2736-2743, 2017.

Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

D. Esseni, M. G.Pala, T. Rollo, IEEE Transactions on Electron Devices, vol. 62, p. 3084-3091, 2015.

Impact of TFET Unidirectionality and Ambipolarity on the Performance of 6T SRAM Cells

S. Strangio, P. Palestri, D. Esseni, L. Selmi, F. Crupi, S. Richter, Q. Zhao, S. Mantl, IEEE Journal of the Electron Devices Society, vol. 3, p. 223-232, 2015.

Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor

Mingda Li, David Esseni, Gregory Snider, Debdeep Jena, Huili Grace Xing, Journal of Applied Physics, vol. 115, pp.2 074508, 2014.

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

L. Knoll, Q. Zhao, A.Nichau, S.Trellenkamp, S.Richter, A. Schäfer, D. Esseni, L. Selmi, K.K. Bourdelle, S. Mantl, IEEE Electron Device Letters, vol. 34, p. 813-815, 2013.

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs

M. G. Pala, D. Esseni,. IEEE Transactions on Electron Devices, vol. 60, p. 2795-2801, 2013.

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability

M. G. Pala, D. Esseni,. IEEE Transactions on Electron Devices, vol. 60, p. 2802-2807, 2013.

Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

O. Badami, D. Lizzit, F.Driussi, P. Palestri, D. Esseni, IEEE Transactions on Electron Devices, vol. 65, p. 3646-3653, 2018.

An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs

O. Badami, E. Caruso, D. Lizzit, P. Osgnach, D. Esseni, P. Palestri, L. Selmi, IEEE Transactions on Electron Devices, vol. 63, p. 2306-2312, 2016.

Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 

D. Lizzit, D. Esseni, P. Palestri, P. Osgnach, L. Selmi, IEEE Transactions on Electron Devices, vol. 61, p. 2027-2034, 2014.

Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel

D. Lizzit, P. Palestri, D. Esseni, A. Revelant, L. Selmi, IEEE Transactions on Electron Devices, vol. 60, p. 1884-1891, 2013.

Mixed FBB/RBB: A Novel Low-Leakage Technique for FinFET Forced Stacks

D. Baccarini, D. Esseni, M. Alioto M. (2012). IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 20, p. 1467-1472, 2012.

A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors

D. Esseni, F. Driussi, IEEE Transactions on Electron Devices, vol. 58, p. 2415-2422, 2011.

Mobility Enhancement in Strained n-FinFETs: Basic Insight and Stress Engineering

N. Serra, D. Esseni, IEEE Transactions on Electron Devices, vol. 57, p. 482-490, 2010.

Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation

M. Lenzi, P. Palestri, E. Gnani, S. Reggiani, A. Gnudi, D. Esseni, L. Selmi, G. Baccarani. IEEE Transactions on Electron Devices, vol. 55, p. 2086-2096, 2008.

Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain

P. Palestri, D. Esseni, S. Eminente, C. Fiegna, E. Sangiorgi, L. Selmi, IEEE Transactions on Electron Devices, vol. 52, p. 2727-2735, 2005.

Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme

D. Lizzit, O. Badami, R. Specogna, D. Esseni, Journal of Applied Physics, vol. 121, 245301, 2017. doi: 10.1063/1.4986644

A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors

D. Lizzit, O. Badami, R. Specogna, D. Esseni, Journal of Applied Physics, vol. 116, 223702, 2014. doi: 10.1063/1.4986644

Investigation of the transport properties of silicon nanowires using deterministic and Monte Carlo approaches to the solution of the Boltzmann Transport Equation

M. Lenzi, P. Palestri, E. Gnani, S. Reggiani, A. Gnudi, D. Esseni, L. Selmi, G. Baccarani, IEEE Transactions on Electron Devices, vol. 55, p. 2086-2096,  2008,  doi: 10.1109/TED.2008.926230

Multi-Subband Monte-Carlo study of Transport, Quantization and Electron Gas Degeneration in Ultra-Thin SOI n-MOSFETs

L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, L. Selmi. IEEE Transactions on Electron Devices, vol. 54, p. 1156-1164, 2007

On the Modeling of Surface Roughness Limited Mobility in SOI MOSFETs and its Correlation to the Transistor Effective Field

D. Esseni, IEEE Transactions on Electron Devices, vol. 51, p. 394-401, 2004.

Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs

D. Esseni, A. Abramo, L. Selmi, E. Sangiorgi. IEEE Transactions on Electron Devices, vol. 50, p. 2445-2455, 2003. ISSN: 0018-9383, doi: 10.1109/TED.2003.819256

Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials

A. M'Foukh, M. Pala, D. Esseni, IEEE Transactions on Electron Devices, vol. 67, p. 5662-5668, 2020. doi: 10.1109/TED.2020.3029548.

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application.

M. Pala, P. Giannozzi, D. Esseni.  Physical Review B, vol. 102, pp. 045410, 2020  doi: 10.1103/PhysRevB.102.045410.

Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

M. Pala, D. Esseni, Journal of Applied Physics, vol. 126, pp. 055703, 2019.  doi: 10.1063/1.5109187

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

M. Pala and D. Esseni, Physical Review B, vol. 97, 125310, 2018, doi: 10.1103/PhysRevB.97.125310

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

J. Cao, D. Logoteta, S. Ozkaya, B. Biel, A. Cresti, M. Pala, D. Esseni, IEEE Transactions on Electron Devices, vol. 63, p. 4388-4394, 2016. doi: 10.1109/TED.2016.2605144

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

F. Conzatti, M. Pala, D. Esseni, E. Bano, L. Selmi, IEEE Transactions on Electron Devices, vol. 59, p. 2085-2092, 2012. doi: 10.1109/TED.2012.2200253