Selected publications about Ferroelectric devices and neuromorphic computing
Readout Current in HZO-Based Bilayer FTJs: Physical Mechanisms and Design Insight
M. Segatto, F. M. Puglisi, F. Driussi, D. Lizzit, L. Carpentieri, S. Slesazeck, T. Mikolajick, D. Esseni. IEEE Transactions on Electron Devices, vol. 73, n. 5, pp. 2723–2729, 2026.
A Novel Ferroelectric MemCapacitor Enabling Multilevel Operation
D. Lizzit, M. Segatto, D. Esseni. IEEE Transactions on Electron Devices, vol. 72, n. 3, pp. 1083–1090, 2025.
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer
C. Rossi, D. Lizzit, D. Esseni. IEEE Access, vol. 13, pp. 68525–68535, 2025.
An LGD Model with Extrinsic Nucleations for Polarization Dynamics in Ferroelectric Materials and Devices
M. Segatto, D. Lizzit, D. Esseni. Scientific Reports, vol. 15, 19619, 2025.
Adiabatic Leaky Integrate and Fire Neurons with Refractory Period for Ultra Low Energy Neuromorphic Computing
M. Massarotto, S. Saggini, M. Loghi, D. Esseni. npj Unconventional Computing, vol. 1, 15, 2024.
Selected publications about Low-dimensional materials and interfaces
Interfacial Oxidation Unlocks Degenerate n-Doping in Monolayer MoS₂
M. Bianchi, D. Lizzit, A. Turoldo, E. Tosi, P. Lacovig, M. Schied, D. Curcio, C. E. Sanders, S. Lizzit, P. Hofmann. Nano Letters, 2026.
Ab-Initio Transport Study of Source-to-Channel Resistance in Metal-MoS₂ Top Contacts Including Image Force Barrier Lowering in a Heterogeneous Dielectric Environment
A. Pilotto, D. Lizzit, M. Pala, D. Esseni. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 1–4, 2025.
Reinterpreting Low Resistance in Sb–MoS₂ Ohmic Contacts by Means of Ab Initio Transport Simulations
D. Lizzit, M. Pala, F. Driussi, D. Esseni. IEEE Transactions on Electron Devices, vol. 71, n. 5, pp. 3301–3306, 2024.
Anisotropic Flat Band and Charge Density Wave in Quasi-One-Dimensional Indium Telluride
M. Bouaziz, A. Mahmoudi, D. Romanin, J.-C. Girard, Y. J. Dappe, F. Bertran, M. Pala, J. Chaste, F. Oehler, A. Ouerghi. Physical Review B, vol. 110, art. 045441, 2024.
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, D. Esseni. ACS Applied Nano Materials, vol. 6, n. 7, pp. 5737–5746, 2023.
Selected publications about Advanced transistors for energy-efficient electronics
Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current
D. K. Nguyen, A. Pilotto, D. Lizzit, M. Pala, P. Dollfus, D. Esseni. IEEE Transactions on Electron Devices, vol. 72, n. 12, pp. 7114–7121, 2025.
Minimum Subthreshold Swing in DS-FETs Based on Graphene and 3D Dirac Metals
E. Baccichetti, R. Marcon, D. Esseni. IEEE Electron Device Letters, vol. 46, n. 11, pp. 2204–2207, 2025.
Transfer-Matrix Modeling of the Access Region Resistance in Graphene Based Dirac-Source FETs
E. Baccichetti, D. Esseni. IEEE Journal of the Electron Devices Society, vol. 13, pp. 200–209, 2025.
Scaled Vertical-Nanowire Heterojunction Tunnelling Transistors with Extreme Quantum Confinement
Y. Shao, M. Pala, H. Tang, B. Wang, J. Li, D. Esseni, J. A. del Alamo. Nature Electronics, vol. 8, pp. 157–167, 2025. Pubblicato online nel 2024.
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating
O. Badami, D. Lizzit, F. Driussi, P. Palestri, D. Esseni. IEEE Transactions on Electron Devices, vol. 65, n. 9, pp. 3646–3653, 2018.
Selected publications about Device physics and multiscale modelling
Dielectric Absorption Caused by Traps in MIM/MOS Capacitors: A New Model Validated Through TCAD
S. Saro, P. Palestri, E. Caruso, P. Toniutti, F. Driussi. IEEE Transactions on Electron Devices, vol. 73, n. 1, pp. 20–26, 2026
Full-Band Quantum Simulations of Semiconductor Devices Based on Empirical Pseudopotential Hamiltonians in the Presence of Phonon Scattering and Non-Radiative Recombination
A. Pilotto, A. M’Foukh, P. Dollfus, J. Saint-Martin, M. Pala. International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 301–304, 2023.
Accurate Nonlocal Impact Ionization Models for Conventional and Staircase Avalanche Photodiodes Derived by Full Band Monte Carlo Transport Simulations
A. Pilotto, D. Esseni, L. Selmi, P. Palestri. IEEE Journal of Quantum Electronics, vol. 58, n. 5, 4500411, 2022.
Unit Cell Restricted Bloch Functions Basis for First-Principle Transport Models: Theory and Application
M. G. Pala, P. Giannozzi, D. Esseni. Physical Review B, vol. 102, 045410, 2020.
Full-Band Quantum Simulation of Electron Devices with the Pseudopotential Method: Theory, Implementation, and Applications
M. G. Pala, D. Esseni. Physical Review B, vol. 97, 125310, 2018.