SISPAD 2023

28th International Conference on Simulation of Semiconductor Processes and Devices - Kobe - Japan.
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures. The conference is held annually in September and the location alternates between the United States, Japan, and Europe.
During the conference, Prof. David Esseni gave a plenary talk entitled “Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices”.
The original contribution entitled "Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the Presence of Phonon Scattering and Non-Radiative Recombination" by Alessandro Pilotto, Adel M’Foukh, Philippe Dollfus, Jérôme Saint-Martin, and Marco Pala has been accepted for oral presentation.