Skip to main content
Nano Electronics logoNano Electronics logo
  • Home
  • The Group
    • Senior staff
      • David Esseni
      • Francesco Driussi
      • Marco Pala
      • Daniel Lizzit
      • Alessandro Pilotto
    • PhD Students and Post-docs
      • Erica Baccichetti
      • Simone Saro
      • Duy Nguyen
      • Marco Massarotto
      • Mattia Segatto
      • Chiara Rossi
    • Visiting Fellows
    • Alumni
  • Research
    • Memristors and neuromorphic computing
    • Quasi 2-D materials and related devices
    • Beyond CMOS FETs for an ultra-low energy electronics
    • Advanced CMOS FETs
    • Transport in nanoelectronic materials and devices
    • Modeling of ion sensors and ion-tronic devices
  • Facilities
    • Research Lab
    • Teaching Lab
  • Teaching
    • Master and Bachelor degrees
    • PhD
    • Mentoring
  • Publications
    • Articles
    • Books/Book chapters
    • Patents
  • News
  • Contacts
  • Home
  • The Group
    • Senior staff
      • David Esseni
      • Francesco Driussi
      • Marco Pala
      • Daniel Lizzit
      • Alessandro Pilotto
    • PhD Students and Post-docs
      • Erica Baccichetti
      • Simone Saro
      • Duy Nguyen
      • Marco Massarotto
      • Mattia Segatto
      • Chiara Rossi
    • Visiting Fellows
    • Alumni
  • Research
    • Memristors and neuromorphic computing
    • Quasi 2-D materials and related devices
    • Beyond CMOS FETs for an ultra-low energy electronics
    • Advanced CMOS FETs
    • Transport in nanoelectronic materials and devices
    • Modeling of ion sensors and ion-tronic devices
  • Facilities
    • Research Lab
    • Teaching Lab
  • Teaching
    • Master and Bachelor degrees
    • PhD
    • Mentoring
  • Publications
    • Articles
    • Books/Book chapters
    • Patents
  • News
  • Contacts

You are here:

  1. Home
  2. News
  3. news details

IEDM 2024

12/09/2024

IEEE 70th Annual IEEE International Electron Devices Meeting - San Francisco - USA

From left to right: David Esseni, Marco Pala, Daniel Lizzit, Chiara Rossi, Alessandro Pilotto, Duy Nguyen

IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. 

Duy Nguyen presented a talk titled "Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations" at the IEDM conference, focused on the simulation of cold-source transistors, which leverage the  intrinsically cold carrier distribution of graphene to overcome the Boltzmann limit of confentional FETs. The results obtained by the NanoElectronic Devices and Circuit group of the University of Udine, are based on a  modelling framework consisting of NEGF-based ab-initio simulations to investigate the operation and design of Dirac-Source FETs (DSFETs). This work  addresses and elucidates several physical and design aspects of DSFETs, including the rethermalization effects due to phonon scattering. 

 

 

Back

Dipartimento Politecnico di Ingegneria e Architettura
via delle Scienze 206, 33100 Udine

Directory search

 

  • English

Running with TYPO3 and Bootstrap Package.