IEDM 2022

IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. 

Daniel Lizzit  will present a reasearch activity done inside of this reasearch group "Ab-initio  transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts" that uses an in-house developed, ab-initio transport methodology to investigate several options for metal contacts to monolayer 2D semiconductors. This is a very hot research topic given the several possibile application fields (sensors, high performance and low power transistors, optoelectronics, ...). Indeed,  the promising intrinsic properties of quasi 2D semiconductors (MoS₂, WSe₂, ...) are not fully exploited given the large contact resistance observed when the 2D semiconductors are in contact with metals to inject/extract electric signals.