Alessandro Pilotto was born in 1992. He received the B.Sc. and M.Sc. degrees in Electronic Engineering from the University of Udine (Italy) in 2014 and 2017, respectively. From January 2016 to June 2016, he was an Erasmus student at the Institut National Polytechnique de Grenoble, Phelma (France). In 2017, he joined the NanoElectronic Devices and Circuits (NEDeC) group at the University of Udine. In February 2021, he obtained his Ph.D. degree in Industrial and Information Engineering with a thesis on the modeling and simulation of Avalanche Photodiodes based on heterojunctions between III-V compund semiconductors for X-ray detection. From November 2020 to October 2021, he worked as a Research Fellow at the NEDeC group, focusing on developing numerical models for simulating Field-Effect Transistors (FETs) based on two-dimensional semiconductor materials. Between November 2021 and April 2023, he served as a Postdoctoral Researcher at the Centre de Nanosciences et de Nanotechnologies (C2N), Universit√© Paris-Saclay, Palaiseau (France). His work there centered around NEGF modeling of Shockley-Read-Hall (SRH) recombination in Single Photon Avalanche Diodes. In May 2023, he rejoined the NEDeC group, where he is currently working on bio-inspired circuits for spike-based neuromorphic computing.